Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer ...
Transistor Amplifiers, Dennis Feucht, Innovatia, 2016, ISBN: 9781682736265; $60 US. Transistor amplifier literature has existed for well over a half century. Why another book on an old subject? What ...
Keynote speaker, IEEE Fellow Kevin Zhang, vice president of Intel’s Technology and Manufacturing Group, also Intel Director of Circuit Technology who led processor development from the 90-to-22 ...
Analog circuit design using MOS transistors represents a dynamic and rapidly evolving field that is integral to modern electronics. Exploiting the inherent advantages of MOS technology—such as ...
While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
The advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication systems and the power electronics needed for state-of-the-art data centers.
Gallium-nitride (GaN) power devices are already causing a minor revolution in industrial power applications such as motor drives and power supplies, but are they also poised to change our expectations ...
IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...
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