Abstract: The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment ...
Abstract: A 21-transistor single-phase-clocked flip-flop with low leakage power is presented in this brief. The architecture of the proposed flip-flop is based on topological modification and device ...
NTT has achieved, for the first time, amplification of mmWave signals used in wireless communications in AlN-based transistors by designing a low-resistance structure. The results will be presented at ...
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