Abstract: In this study, AlGaN/GaN high-electron mobility transistors (HEMT) with Γ-shaped gate structure was developed and analyzed for Ka-band application. Under the frequency of 28 GHz, the ...
Abstract: In this study, carbon nanotube field-effect transistors (CNTFETs) are presented as the basis for energy-efficient multiple-valued logic (MVL) circuits. Leveraging CNTFET unique properties ...
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