Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...
Abstract: Continued improvement in the 3D NAND bit density is essential to satisfy the exponentially growing demand for data storage. The transition from 3b/cell (TLC) to 4b/cell (QLC) is a ...
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